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| AO3403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product ordering option. AO3403 and AO3403L are electrically identical. Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 180m (VGS = -4.5V) RDS(ON) < 260m (VGS = -2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A Maximum -30 12 -2.6 -2.2 -20 1.4 1 -55 to 150 Units V V A TA=25C TA=70C ID IDM PD TJ, TSTG TA=70C W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol A A t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3403 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.6A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, I D=-2A VGS=-2.5V, I D=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-2.5A 3 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -10 102 154 128 187 4.5 -0.85 -1 -2 409 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 55 42 12 4.4 VGS=-4.5V, VDS=-15V, ID=-2.5A 0.8 1.32 5.3 VGS=-10V, VDS=-15V, RL=6, RGEN=3 IF=-2.5A, dI/dt=100A/s 4.4 31.5 8 15.8 8 8 9 45 16 19 12 16 5.3 500 130 200 180 260 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 5: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -5V -10V 15 -4.5V -4V -ID(A) VGS=-3.5V 10 -3V -2.5V 2 -2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 200 RDS(ON) (m) 150 VGS=-4.5V 100 VGS=-10V 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-2.5V Normalized On-Resistance 1.6 VGS=-10V 1.4 VGS=-4.5V VGS=-2.5V 1.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 6 4 125C 8 10 VDS=-5V 25C -ID (A) 5 1 ID=-2A 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 300 250 RDS(ON) (m) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-2A 125C -IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=-15V ID=-2.5A Capacitance (pF) 500 400 300 200 Coss 100 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 100s 1ms 10ms 20 TJ(Max)=150C TA=25C 15 Power (W) 10s -ID (Amps) 10.0 10 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single 0.0001 Pulse 0.001 0.01 0.1 1 0.01 0.00001 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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